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AGB3301
50W High Linearity Low Noise Wideband Gain Block
FEATURES
* * * * * * * * * 250-3000 MHz Frequency Range +45 dBm Output IP3 Low Noise Figure: 2.4 dB at 900 MHz 13.5 dB Gain at 900 MHz +24 dBm P1dB SOT-89 Package Single +5V to +9V Supply Low Power: less than 1 Watt Case Temperature: -40 to +100 oC Data Sheet - Rev 2.0
APPLICATIONS
* * * * *
Cellular Base Stations for W-CDMA, CDMA, TDMA, GSM, PCS and CDPD systems
Fixed Wireless MMDS/WLL WLAN, HyperLAN CATV
S24 Package SOT-89
PRODUCT DESCRIPTION
The AGB3301 is one of a series of GaAs MESFET amplifiers designed for use in applications requiring high linearity, low noise and low distortion. With a high output IP3, low noise figure and wide band operation, the AGB3301 is ideal for 50W
wireless infrastructure applications such as Cellular Base Stations, MMDS, and WLL. Offered in a low cost SOT-89 surface mount package, the AGB3301 requires a single +5V to +9V supply, and typically consumes less than 1 Watt of power.
RF Input
RF Output / Bias
Figure 1: Block Diagram
06/2003
AGB3301
GND 4
1 RFIN
2 GND
Figure 2: Pin Out
3 RFOUT
Table 1: Pin Description
PIN 1 2 3 4
N AME RFIN GND RFOUT GND
D ESC R IPTION RF Input Ground RF Output / Bi as Ground
2
Data Sheet - Rev 2.0 06/2003
AGB3301
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PAR AMETER D evi ce Voltage RF Input Power Storage Temperature C hannel Temperature
MIN 0 -40 -
MAX +12 +15 +150 +150
U N IT VD C dB m C C
Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability.
Table 3: Operating Ranges
PAR AMETER Operati ng Frequency: f D evi ce Voltage: VDD C ase Temperature: Tc
MIN 250 -40
TYP +9 -
MAX 3000 +10 +100
U N IT MHz VD C
o
C
The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications.
Data Sheet - Rev 2.0 06/2003
3
AGB3301
Table 4: Electrical Specifications - Unmatched 50W Test Circuit (TA = +25 C, VDD = +9 VDC, f = 900 MHz, see Figure 3)
PAR AMETER Gai n: S21 Input Return Loss: S11 Output Return Loss: S22 Output IP3
(1)
MIN 12 +42 90
TYP 13.5 -15 -15 +45 2.4 +24 110
MAX 15 -10 -10 3.5 40 130
U N IT dB dB dB dB m dB dB m
o
Noi se Fi gure Output 1dB C ompressi on: P1dB Thermal Resi stance: qJC Supply C urrent
C /W mA
Notes: (1) OIP3 is measured with two tones: 900 MHz and 901 MHz, +5dBm output per tone.
VSUPPLY Bypass RF Choke
DC Block RF Input
AGB3301
DC Block VDD RF Output
Figure 3: Unmatched 50W Test Circuit
4
Data Sheet - Rev 2.0 06/2003
AGB3301
PERFORMANCE DATA
Figures 4 through 8 contain data for the device as tested in the unmatched 50W test circuit shown in Figure 3. Unless otherwise indicated, VDD = +9 VDC. Figure 4: OIP3 vs. Frequency (in Unmatched 50W Test Circuit) Figure 5: OIP3 vs. Case Temperature (in Unmatched 50W Test Circuit)
50
50
45
45
OIP3 (dBm)
OIP3 (dBm)
Output Power = +5 dBm TA = +25 oC
40
40
35
35
30
30
Output Power = +5 dBm Frequency = 900 MHz
25 0 300 600 900 1200 1500 1800 2100 2400 2700 3000
25 -50 -25 0 25 50 75 100
Frequency (MHz)
Case Temperature (oC)
Figure 6: Gain vs. Frequency (in Unmatched 50W Test Circuit)
16 14
13 .5 14
Figure 7: Gain vs. Case Temperature (in Unmatched 50W Test Circuit)
12
13
10
Gain (dB)
8 6
Gain (dB)
12 .5
12
4 2 0 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 TA = +25 oC
11 .5 F requenc y = 9 00 M Hz
11 -50 -25 0 25 50
o
75
10 0
Frequency (MHz)
Case T emp erture ( C)
5 0 -5
Figure 8: Return Loss vs. Frequency (in Unmatched 50W Test Circuit)
Return Loss (dB)
-10 -15 -20 -25 -30 -35 -40 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 S11 S22 TA = +25 o C
Frequency (MHz)
Data Sheet - Rev 2.0 06/2003
5
AGB3301
APPLICATION INFORMATION
+9 VDC
900 MHz Application: +9V Supply
(824 - 960 MHz)
0.01uF
18nH 100pF RF Input 1pF
Capacitors are Murata GRM39 series. Inductors are Coilcraft 0603CS series.
3.9nH
AGB3301
6pF VDD RF Output
Figure 9: 900 MHz Application Circuit (50W Terminations)
Table 5: 900 MHz Application Performance (VSUPPLY = +9 VDC)
PAR AMETER Gai n: S21 Input Return Loss: S11 Output Return Loss: S22 Output IP3
(1)
Figure 10: Output 3rd-Order Intercept vs. Power (Vsupply = +9 VDC, 900 MHz Application Circuit)
50
TYP 13.8 -20 -18 +47 2.4 +24
U N IT dB
OIP3 (dBm)
45
dB dB dB m dB dB m
40
35
Noi se Fi gure Output 1dB C ompressi on: P1dB
30
25 0 2 4 6 8 10 12 14 16 18
Note: (1) OIP3 is measured with two tones: 900 MHz and 901 MHz, +5dBm output per tone.
Output Power per tone (dBm)
Figure 11: Gain vs. Frequency (VSUPPLY = +9 VDC, 900 MHz Application Circuit)
16 14 12
Figure 12: Return Loss vs. Frequency (VSUPPLY = +9 VDC, 900 MHz Application Circuit)
5 0 -5
Return Loss (dB)
-10 -15 -20 -25 -30 -35 -40 S11 S22 0 300 600 900 1200 1500 1800 2100 2400 2700 3000
Gain (dB)
10 8 6 4 2 0 0 300 600 900 1200 1500 1800 2100 2400 2700 3000
Frequency (MHz)
Frequency (MHz)
6
Data Sheet - Rev 2.0 06/2003
AGB3301
+5 VDC
900 MHz Application: +5V Supply
(824 - 960 MHz)
0.01uF
18nH 100pF RF Input 1pF
Capacitors are Murata GRM39 series. Inductors are Coilcraft 0603CS series.
3.9nH
AGB3301
6pF VDD RF Output
Figure 13: 900 MHz Application Circuit (50W Terminations)
Table 6: 900 MHz Application Performance (VSUPPLY = +5 VDC)
PAR AMETER Gai n: S21 Input Return Loss: S11 Output Return Loss: S22 Output IP3
(1)
Figure 14: Output 3rd-Order Intercept vs. Power (Vsupply = +5 VDC, 900 MHz Application Circuit)
50
TYP 13.5 -20 -20 +42.5 2.5 +18.5
U N IT dB
OIP3 (dBm)
45
dB dB dB m dB dB m
40
35
Noi se Fi gure Output 1dB C ompressi on: P1dB
30
25 0 2 4 6 8 10 12 14 16 18
Note: (1) OIP3 is measured with two tones: 900 MHz and 901 MHz, +5dBm output per tone.
Output Power per tone (dBm)
Figure 15: Gain vs. Frequency (VSUPPLY = +5 VDC, 900 MHz Application Circuit)
16 14 12
Figure 16: Return Loss vs. Frequency (VSUPPLY = +5 VDC, 900 MHz Application Circuit)
5 0 -5
Return Loss (dB)
-10 -15 -20 -25 -30 -35 -40 S11 S22 0 300 600 900 1200 1500 1800 2100 2400 2700 3000
Gain (dB)
10 8 6 4 2 0 0 300 600 900 1200 1500 1800 2100 2400 2700 3000
Frequency (MHz)
Frequency (MHz)
Data Sheet - Rev 2.0 06/2003
7
AGB3301
+9 VDC
1900 MHz Application: +9V Supply
(1710 - 1990 MHz)
0.01uF
Coilcraft 1008CS series
18nH 2pF RF Input 1pF 3.9nH
AGB3301
6pF VDD 4.7nH 1pF RF Output
Capacitors are Murata GRM39 series. Inductors < 10nH are TOKO PLT20112-F series.
Figure 17: 1900 MHz Application Circuit (50W Terminations)
Table 7: 1900 MHz Application Performance (VSUPPLY = +9 VDC)
PAR AMETER Gai n: S21 Input Return Loss: S11 Output Return Loss: S22 Output IP3
(1)
Figure 18: Output 3rd-Order Intercept vs. Power (VSUPPLY = +9 VDC, 1900 MHz Application Circuit)
50
TYP 12.1 -10 -12 45 2.9 +21
U N IT dB
OIP3 (dBm)
45
dB dB dB m dB dB m
40
35
Noi se Fi gure Output 1dB C ompressi on: P1dB
30
25 0 2 4 6 8 10 12 14 16 18
Note: (1) OIP3 is measured with two tones: 1900 MHz and 1901 MHz, +5dBm output per tone.
Output Power per tone (dBm)
19: Gain vs. Frequency (VSUPPLY = +9 VDC, 1900 MHz Application Circuit)
16 14 12
Figure 20: Return Loss vs. Frequency (VSUPPLY = +9 VDC, 1900 MHz Application Circuit)
5 0 -5
Return Loss (dB)
Gain (dB)
10 8 6 4 2 0 0 300 600 900 1200 1500 1800 2100 2400 2700 3000
-10 -15 -20 -25 -30 -35 -40 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 S11 S22
Frequency (MHz)
Frequency (MHz)
8
Data Sheet - Rev 2.0 06/2003
AGB3301
+5 VDC
1900 MHz Application: +5V Supply
(1710 - 1990 MHz)
0.01uF
Coilcraft 1008CS series
18nH 2pF RF Input 1pF 3.9nH
AGB3301
6pF VDD 4.7nH 1pF RF Output
Capacitors are Murata GRM39 series. Inductors < 10nH are TOKO PLT20112-F series.
Figure 21: 1900 MHz Application Circuit (50W Terminations)
Table 8: 1900 MHz Application Performance (VSUPPLY = +5 VDC)
PAR AMETER Gai n: S21 Input Return Loss: S11 Output Return Loss: S22 Output IP3
(1)
Figure 22: Output 3rd-Order Intercept vs. Power (VSUPPLY = +5 VDC, 1900 MHz Application Circuit)
50
TYP 12.0 -10 -15 +37 2.8 +18
U N IT dB
OIP3 (dBm)
45
dB dB dB m dB dB m
40
35
Noi se Fi gure Output 1dB C ompressi on: P1dB
30
25 0 2 4 6 8 10 12 14 16 18
Note: (1) OIP3 is measured with two tones: 1900 MHz and 1901 MHz, +5dBm output per tone.
Output Power per tone (dBm )
Figure 23: Gain vs. Frequency (VSUPPLY = +5 VDC, 1900 MHz Application Circuit)
16 14 12
Figure 24: Return Loss vs. Frequency (VSUPPLY = +5 VDC, 1900 MHz Application Circuit)
5 0 -5
Return Loss (dB)
-10 -15 -20 -25 -30 -35 -40 S11 S22 0 300 600 900 1200 1500 1800 2100 2400 2700 3000
Gain (dB)
10 8 6 4 2 0 0 300 600 900 1200 1500 1800 2100 2400 2700 3000
Frequency (MHz)
Frequency (MHz)
Data Sheet - Rev 2.0 06/2003
9
AGB3301
2500 MHz Application: +9V Supply
(2400 - 2690 MHz)
+9 VDC 0.01uF
68nH
TOKO PTL2012-F series Coilcraft 1008CS series
1.5nH RF Input 1.2pF
2pF
AGB3301
10pF VDD 1pF RF Output
Capacitors are Murata GRM40 series.
Figure 25: 2500 MHz Application Circuit (50W Terminations)
Table 9: 2500 MHz Application Performance (VSUPPLY = +9 VDC)
PAR AMETER Gai n: S21 Input Return Loss: S11 Output Return Loss: S22 Output IP3
(1)
Figure 26: Output 3rd-Order Intercept vs. Power (VSUPPLY = +9 VDC, 2500 MHz Application Circuit)
50
TYP 11.5 -15 -11 +45 3.4 +19
U N IT dB
OIP3 (dBm)
45
dB dB dB m dB dB m
40
35
Noi se Fi gure Output 1dB C ompressi on: P1dB
30
25 0 2 4 6 8 10 12 14 16 18
Note: (1) OIP3 is measured with two tones: 2500 MHz and 2501 MHz, +5dBm output per tone.
Output Power per tone (dBm)
Figure 27: Gain vs. Frequency (VSUPPLY = +9 VDC, 2500 MHz Application Circuit)
16 14 12
Figure 28: Return Loss vs. Frequency (VSUPPLY = +9 VDC, 2500 MHz Application Circuit)
5 0 -5
Return Loss (dB)
Gain (dB)
10 8 6 4 2 0 0 300 600 900 1200 1500 1800 2100 2400 2700 3000
-10 -15 -20 -25 -30 -35 -40 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 S11 S22
Frequency (MHz)
Frequency (MHz)
10
Data Sheet - Rev 2.0 06/2003
AGB3301
2500 MHz Application: +5V Supply
(2400 - 2690 MHz)
+5 VDC 0.01uF
68nH
TOKO PTL2012-F series Coilcraft 1008CS series
1.5nH RF Input 1.2pF
2pF
AGB3301
10pF VDD 1pF RF Output
Capacitors are Murata GRM40 series.
Figure 29: 2500 MHz Application Circuit (50W Terminations)
Table 10: 2500 MHz Application Performance (VSUPPLY = +5 VDC)
PAR AMETER Gai n: S21 Input Return Loss: S11 Output Return Loss: S22 Output IP3
(1)
Figure 30: Output 3rd-Order Intercept vs. Power (VSUPPLY = +5 VDC, 2500 MHz Application Circuit)
50
TYP 11.5 -15 -15 +42 3.3 +17
U N IT dB
OIP3 (dBm)
45
dB dB dB m dB dB m
40
35
Noi se Fi gure Output 1dB C ompressi on: P1dB
30
25 0 2 4 6 8 10 12 14 16 18
Note: (1) OIP3 is measured with two tones: 2500 MHz and 2501 MHz, +5dBm output per tone.
Output Power per tone (dBm)
Figure 31: Gain vs. Frequency (VSUPPLY = +5 VDC, 2500 MHz Application Circuit)
16 14 12
Figure 32: Return Loss vs. Frequency (VSUPPLY = +5 VDC, 2500 MHz Application Circuit)
5 0 -5
Return Loss (dB)
Gain (dB)
10 8 6 4 2 0 0 300 600 900 1200 1500 1800 2100 2400 2700 3000
-10 -15 -20 -25 -30 -35 -40 0 300 600 900 1200 1500 1800 2100 2400 2700 3000 S11 S22
Frequency (MHz)
Frequency (MHz)
Data Sheet - Rev 2.0 06/2003
11
AGB3301 Bias Circuit A schematic of the basic, unmatched bias circuit for the AGB Series Gain Blocks is shown in Figure 33. The RF input and output terminations are 50W. Inductor L1 provides DC power from VSUPPLY and serves as an RF choke to maintain desired AC performance. The input capacitor C1 and output capacitor C2 are RF blocks that isolate DC current from adjacent circuits. Capacitor C3 is used as an RF bypass that minimizes noise from the supply. In some applications, a feedback resistor R1 may be added in series with L1, as shown in Figure 34, for improved stability or to serve as a voltage drop for operation from higher supply voltages. Matching for RF Performance The AGB3301 Gain Block amplifier can be used in many fixed wireless frequency bands, such as the 824-894 MHz U.S. cellular bands, the 1850-1990 MHz PCS band, the 880-960 MHz GSM band, the 24002500 MHz ISM band, and the 2500-2686 MHz MMDS band. Reactive matching circuits may be designed for both the input and output, in order to optimize the RF performance for a particular application. For example, gain, linearity (OIP3) and return loss may be improved over a particular frequency band of interest. Recommended matching circuits for various applications, as well as wideband S-parameters to use in the simulation of custom designs, are included in this data sheet. For a particular application not addressed in the data sheet, please consult with an ANADIGICS Sales Reperesentative or Application Engineer. Evaluation Boards A versatile evaluation board that enables users to measure actual device performance has been developed for the AGB Series Gain Blocks. The generic layout allows the user to implement a wide variety of matching circuits, in order to assess performance for a particular application. The evaluation board is 1.0 square, and is fabricated on 0.031 thick FR-4 material. Figures 35 and 36 show the via hole locations and the layout pattern on both sides of the evaluation board. The vias have a 0.010 diameter and are plated through. To request an evaluation board, please contact an ANADIGICS Sales Reperesentative or Application Engineer.
RF Output
VSUPPLY
C3 L1 C1 RF Input Gain Block VDD C2
Figure 33: Unmatched Bias Circuit
VSUPPLY C3 R1
ESD Sensitivity Electrostatic discharges can cause permanent damage to this device. Electrostatic discharges accumulate on test equipment and the human body, and can discharge without detection. Although the AGB3301 has some internal ESD protection, proper precautions and handling are strongly recommended. Refer to the ANADIGICS application note on ESD precautions. S-Parameter Data Table 11 depicts the raw Magnitude and Angle data for an unmatched AGB3301 over the 50 to 3000 MHz frequency range of operation. Data is shown in 100 MHz steps, with a characteristic impedance of 50 Ohms, VDD =+9V, and at TA = +25 oC.
L1 C1 RF Input Gain Block VDD C2 RF Output
Figure 34: Bias Circuit with Optional Feedback / Voltage Drop Resistor 12
Data Sheet - Rev 2.0 06/2003
AGB3301
Figure 35: Evaluation Board - Front (not to scale)
Figure 36: Evaluation Board - Back (X-ray) (not to scale)
Data Sheet - Rev 2.0 06/2003
13
AGB3301 Table 11: AGB3301 S-Parameters in Unmatched 50 Ohm Test Fixture (TA = +25 oC, VDD = +9 VDC)
FR E Q (MH z ) 50 100 200 300 400 500 600 700 800 900 1000 1100 1200 1300 1400 1500 1600 1700 1800 1900 2000 2100 2200 2300 2400 2500 2600 2700 2800 2900 3000 S11 (dB MAG) -17.240 -17.818 -17.974 -17.597 -16.818 -16.203 -15.872 -15.078 -14.502 -13.558 -12.872 -12.164 -11.546 -10.784 -10.459 -9.687 -9.113 -8.542 -8.130 -7.614 -7.248 -6.829 -6.460 -6.101 -5.808 -5.462 -5.221 -5.002 -4.731 -4.499 -4.268 S11 (AN G) -26.836 -24.935 -34.201 -48.060 -61.919 -72.241 -86.658 -99.811 -111.363 -123.957 -136.927 -147.021 -159.463 -170.927 178.426 166.125 154.614 144.746 132.897 121.269 111.723 99.551 88.236 78.176 67.626 56.234 46.556 35.297 25.044 15.361 5.171 S 21 (dB MAG) 13.890 13.923 13.867 13.823 13.738 13.689 13.618 13.505 13.431 13.324 13.155 13.041 12.828 12.712 12.567 12.363 12.297 11.990 11.806 11.563 11.180 11.067 10.692 10.611 10.326 9.626 9.472 8.791 8.367 8.378 8.018 S 21 (AN G) 177.501 166.419 152.851 137.564 122.524 109.623 94.800 80.160 67.244 52.393 37.799 25.076 10.497 -4.332 -16.845 -31.761 -46.270 -57.669 -72.889 -86.545 -100.060 -114.887 -128.636 -142.376 -153.887 -167.744 179.161 166.470 151.095 140.912 126.890 S 12 (dB MAG) -17.739 -17.740 -17.761 -17.829 -17.880 -17.981 -18.068 -18.252 -18.380 -18.552 -18.793 -18.992 -19.285 -19.621 -19.828 -20.305 -20.620 -20.966 -21.605 -22.073 -22.884 -23.345 -24.074 -24.869 -25.528 -27.027 -27.961 -29.593 -31.373 -32.317 -34.888 S 12 (AN G) -5.826 -12.179 -22.231 -34.138 -46.032 -56.240 -68.243 -79.835 -90.550 -102.255 -114.050 -124.586 -136.011 -148.937 -158.967 -171.081 175.644 166.403 153.682 141.197 131.005 116.441 105.279 93.413 82.036 68.885 56.842 45.457 26.771 14.056 -1.921 S 22 (dB MAG) -22.828 -22.325 -21.803 -20.469 -19.340 -18.198 -17.305 -15.953 -14.951 -13.797 -13.045 -12.202 -11.418 -10.467 -9.884 -9.063 -8.547 -7.995 -7.426 -6.857 -6.447 -6.000 -5.583 -5.240 -4.884 -4.507 -4.273 -4.003 -3.738 -3.573 -3.327 S 22 (AN G) -12.593 -9.197 -8.616 -13.300 -22.688 -32.842 -42.732 -55.898 -66.502 -79.947 -94.039 -106.633 -120.336 -134.472 -144.828 -158.869 -172.334 175.205 162.038 148.241 136.894 123.076 110.380 98.427 85.867 72.338 61.953 49.279 36.788 25.880 13.676 K Factor 1.071 1.071 1.074 1.075 1.074 1.074 1.075 1.077 1.074 1.067 1.073 1.067 1.074 1.063 1.063 1.060 1.045 1.046 1.066 1.061 1.131 1.113 1.164 1.191 1.228 1.463 1.564 1.949 2.365 2.484 3.298
14
Data Sheet - Rev 2.0 06/2003
AGB3301 PACKAGE OUTLINE
Figure 37: S24 Package Outline - SOT-89
1
Figure 38: Branding Specification
Data Sheet - Rev 2.0 06/2003
15
AGB3301
ORDERING INFORMATION
PAR T N U MB ER AGB3301S24Q1 TEMPER ATU R E R AN GE -40 to +100C PAC K AGE D ESC R IPTION SOT-89 Package C OMPON EN T PAC K AGIN G 1,000 pi ece Tape and Reel
ANADIGICS, Inc.
141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: Mktg@anadigics.com IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a products formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders.
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited.
WARNING
16
Data Sheet - Rev 2.0 06/2003

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